Mr Chaoping Zhang
Mr. Chaoping Zhang received the B.E. degree in nuclear engineering and technology from Chengdu University of Technology, China, in 2016, and M.E degree with Distinction in Mechatronics from Massey University, New Zealand, in 2018. He was awarded a University of Auckland Doctoral Scholarship (UoADS), and commenced his doctorate at the Auckland Bioengineering Institute, the University of Auckland, New Zealand, in 2018. His current research interests include sensor design, analog CMOS integrated circuit design, and VLSI design.
Research | Current
Thesis: Miniaturised signal conditioning systems for implantable pressure sensors
Abstract: Pressure inside our bodies is a fundamental physiological parameter that gives us insight into the status of diseases such as heart failure, hypertension, urinary function, recovery from trauma, and hydrocephalus. However, the accuracy of implantable devices is affected by drift and frequency variation. Drift can be caused by many means such as relaxation of materials, outgassing from the internal components and biofouling – all of which are subjects of our MBIE pressure programme grant. The passive resonator devices are potentially also affected by external tissue variation via the resonator coil (which also functions as the implant antenna) which is electromagnetically coupled to the surrounding tissue. This means that changes in dielectric properties (e.g. differences between each patient, implant location, component alignment) can alter the resonator frequency (Bocan et. Al. 2017) and appear as an error in the reported pressure signal.
Our hypothesis is that this dielectric loading is a significant source of error that could be eliminated with a pressure sensor readout integrated circuit that is less sensitive to dielectric properties of the surrounding tissue.
Master of Engineering with Distinction
Selected publications and creative works (Research Outputs)
- Zhang, C., & Hasan, S. M. R. (2019). A New Floating-gate Radiation Sensor and Readout Circuit in Standard Single-Poly 130-nm CMOS Technology. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66 (7), 1906-1915. 10.1109/TNS.2019.2922714
- Zhang, C., & Hasan, S. M. R. (2018). A new floating-gate MOSFET model for analog circuit simulation and design. Analog Integrated Circuits and Signal Processing10.1007/s10470-018-1374-3